Part Number Hot Search : 
MVCO1600 STR731F STR731F LSU10M12 13FR005 162244 ST100 BCM3033
Product Description
Full Text Search
 

To Download 2SD1980 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2SD2195 / 2SD1980 / 2SD1867
Transistors
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.
External dimensions (Unit : mm)
2SD2195
4.5 1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5 4.0
Equivalent circuit
C
0.4
0.4 1.5
0.5 1.5 3.0
0.4
ROHM : MPT3 EIAJ : SC-62
B
(1) Base (2) Collector (3) Emitter
2SD1980
R1 R2
6.5 5.1
E R1 3.5k R2 300 B : Base C : Collector E : Emitter
1.5
2.3 0.5
5.5
0.75
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD2195 Collector power dissipation 2SD1980
Symbol VCBO VCEO VEBO IC
PC
2SD1867 Junction temperature Storage temperature
Tj Tstg
1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
0.65Max.
1.0
0.9
0.5 (1) (2) 2.54 (3) 2.54 1.05 0.45
Taping specifications
14.5
4.4
Limits 100 100 6 2 3 1 0.5 2 2 1 10 1 3 150 -55 to +150
Unit V V V A(DC) A(Pulse) W W(Tc=25C) W C C
0.9
(1)
2.3
(2) (3)
2.3
0.8Min.
0.5 1.0
0.65
2.5
Absolute maximum ratings (Ta=25C)
0.9
1.5
9.5
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
2SD1867
6.8
2.5
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Rev.B
1/3
2SD2195 / 2SD1980 / 2SD1867
Transistors
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
2SD2195 MPT3 1k to 10k DP T100 1000
2SD1980 CPT3 1k to 10k - TL 2500
2SD1867 ATV 1k to 10k - TV2 2500
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag Base-Emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob
Min. 100 100 6 - - - - 1000 - -
Typ. - - - - - - - - 80 25
Max. - - - 10 3 1.5 2.0 10000 - -
Unit V V V A mA V V - MHz pF
Conditions IC = 50A IC = 5mA IE = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA IC/IB = 1A/1mA VCE = 2V , IC = 1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz
Electrical characteristic curves
2.0
COLLECTOR CURRENT : IC (A)
Ta=25C
A 1m
DC CURRENT GAIN : hFE
1.6
COLLECTOR CURRENT : IC (A)
A 0.9m A 0.8m mA 0.7 A 0.6m A 0.5m
A 0.4m
10 5 2 1
C
VCE=2V
10000 5000 2000 1000 500 200 100 50
Ta=25C
VCE=4V 2V
1.2
0.5 0.2 0.1 0.05 0.02
100
0.8
A IB=0.3m
0.4
Ta=
25C -25C
0
0
1
2
3
4
5
0.01
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
20 10 0.001
0.01
0.1
1
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=2V
Ta=25C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
10000 5000
100 50 20 10 5
100 50 20 10 5 2
25C
IC/IB=1000
DC CURRENT GAIN : hFE
2000 1000
-2 25 5 C C
Ta =1
500 200 100 50 20
00
C
IC/IB=1000
2 1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2
0.5 1 2 5 10
Ta=-25C
500
1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10
100C
10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
2
5
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs.collector current vs.collector current
Rev.B
2/3
2SD2195 / 2SD1980 / 2SD1867
Transistors
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 500 200 100 50 20 10 5 2 1 0.1
0.2 0.5 1 2 5 10 20 50 100
Ta=25C f=1MHz IE=0A
10 5
IC Max Pulse
Ta=25C Single Nonrepetitive Pulse
Pw=
Pw =
3 2 1
IC Max Pulse IC Max
0 =1 Pw
COLLECTOR CURRENT : IC (A)
2 1
500m 200m 100m 50m 20m 10m 5m 2m glass epoxy board. 1m 0.1 0.2 0.5 1 2
When mounted on a 14 8 0.8mm
+ +
1ms s 0m =1 Pw
= Pw
10
0m
m
s 0m 10
s
0.5
s
IC (A)
DC
DC
0.2 0.1 0.05
Ta=25C Single Nonrepetitive Pulse
5 10 20
50 100 200 500 1000
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO EMITTER VOLTTER VOLTAGE :VCE (V)
VCE (V)
Fig.7 Collector output capacitance vs. collector-base voltage
Fig.8 Safe operating area (2SD2195)
Fig.9 Safe operating area(2SD1867)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


▲Up To Search▲   

 
Price & Availability of 2SD1980

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X